Vishay Siliconix IRFB9N30APBF

Part No.:
IRFB9N30APBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC Supply HubIRFB9N30APBF.pdf
Description:
MOSFET N-CH 300V 9.3A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
300 V
Current - Continuous Drain (Id) @ 25°C:
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
920 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

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6. What is the process for return or replacement of IRFB9N30APBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB9N30APBF we delivered, we will accept the replacement or return of the IRFB9N30APBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB9N30APBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRFB9N30APBF pin diagram, IRFB9N30APBF datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IRFB9N30APBF
Part Number IRFB9N30APBF
Manufacturer Vishay Siliconix
Series -
Package/Case TO-220-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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