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Rohm Semiconductor RTQ035N03HZGTR

Part No.:
RTQ035N03HZGTR
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
IC Supply HubRTQ035N03HZGTR.pdf
Description:
MOSFET N-CH 30V 3.5A TSMT6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
54mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
6.4 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
285 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
950mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)

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6. What is the process for return or replacement of RTQ035N03HZGTR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RTQ035N03HZGTR we delivered, we will accept the replacement or return of the RTQ035N03HZGTR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RTQ035N03HZGTR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image RTQ035N03HZGTR
Part Number RTQ035N03HZGTR
Manufacturer Rohm Semiconductor
Series -
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 54mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 10 V
FET Feature -
Power Dissipation (Max) 950mW (Ta)
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
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