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Transphorm TP65H300G4JSGB-TR

Part No.:
TP65H300G4JSGB-TR
Manufacturer:
Transphorm
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
IC Supply HubTP65H300G4JSGB-TR.pdf
Description:
GANFET N-CH 650V 9.2A QFN5X6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,899

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Manufacturer:
Transphorm
Series:
SuperGaN®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V
Rds On (Max) @ Id, Vgs:
312mOhm @ 6.5A, 6V
Vgs(th) (Max) @ Id:
2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
3.5 nC @ 10 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
41.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)

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6. What is the process for return or replacement of TP65H300G4JSGB-TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TP65H300G4JSGB-TR we delivered, we will accept the replacement or return of the TP65H300G4JSGB-TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TP65H300G4JSGB-TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TP65H300G4JSGB-TR pin diagram, TP65H300G4JSGB-TR datasheet?

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Image TP65H300G4JSGB-TR
Part Number TP65H300G4JSGB-TR
Manufacturer Transphorm
Series SuperGaN®
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 312mOhm @ 6.5A, 6V
Vgs(th) (Max) @ Id 2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 400 V
FET Feature -
Power Dissipation (Max) 41.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
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