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Transphorm TP65H070LDG-TR

Part No.:
TP65H070LDG-TR
Manufacturer:
Transphorm
Category:
FETs, MOSFETs
Package:
3-PowerDFN
Datasheet:
IC Supply HubTP65H070LDG-TR.pdf
Description:
650 V 25 A GAN FET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:662

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Manufacturer:
Transphorm
Series:
TP65H070L
Package/Case:
3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-PQFN (8x8)

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6. What is the process for return or replacement of TP65H070LDG-TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TP65H070LDG-TR we delivered, we will accept the replacement or return of the TP65H070LDG-TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TP65H070LDG-TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TP65H070LDG-TR pin diagram, TP65H070LDG-TR datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TP65H070LDG-TR TP65H070LDG
Part Number TP65H070LDG-TR TP65H070LDG
Manufacturer Transphorm Transphorm
Series TP65H070L TP65H070L
Package/Case 3-PowerDFN 3-PowerDFN
Packaging Tape & Reel (TR) Tube
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology GaNFET (Gallium Nitride) GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 9.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V 600 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PQFN (8x8) 3-PQFN (8x8)
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