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Toshiba Semiconductor and Storage XPW4R10ANB,L1XHQ

Part No.:
XPW4R10ANB,L1XHQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
IC Supply HubXPW4R10ANB,L1XHQ.pdf
Description:
MOSFET N-CH 100V 70A AEC-Q101
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,374

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
70A
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4970 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
170W (Tc)
Operating Temperature:
-55°C ~ 175°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-DSOP Advance

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6. What is the process for return or replacement of XPW4R10ANB,L1XHQ?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the XPW4R10ANB,L1XHQ we delivered, we will accept the replacement or return of the XPW4R10ANB,L1XHQ only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of XPW4R10ANB,L1XHQ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as XPW4R10ANB,L1XHQ pin diagram, XPW4R10ANB,L1XHQ datasheet?

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Image XPW4R10ANB,L1XHQ
Part Number XPW4R10ANB,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 70A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4970 pF @ 10 V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
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