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Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ

Part No.:
XPH2R106NC,L1XHQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
IC Supply HubXPH2R106NC,L1XHQ.pdf
Description:
MOSFET N-CH 60V 110A 8SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,694

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
U-MOSVIII-H
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
110A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
104 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Operating Temperature:
175°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP Advance (5x5)

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6. What is the process for return or replacement of XPH2R106NC,L1XHQ?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the XPH2R106NC,L1XHQ we delivered, we will accept the replacement or return of the XPH2R106NC,L1XHQ only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of XPH2R106NC,L1XHQ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image XPH2R106NC,L1XHQ
Part Number XPH2R106NC,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
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