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STMicroelectronics STFW69N65M5

Part No.:
STFW69N65M5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-3P-3 Full Pack
Datasheet:
IC Supply HubSTFW69N65M5.pdf
Description:
MOSFET N-CH 650V 58A ISOWATT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:145

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Manufacturer:
STMicroelectronics
Series:
MDmesh™ V
Package/Case:
TO-3P-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
6420 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PF

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6. What is the process for return or replacement of STFW69N65M5?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STFW69N65M5 we delivered, we will accept the replacement or return of the STFW69N65M5 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STFW69N65M5.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STFW69N65M5 pin diagram, STFW69N65M5 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image STFW69N65M5
Part Number STFW69N65M5
Manufacturer STMicroelectronics
Series MDmesh™ V
Package/Case TO-3P-3 Full Pack
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6420 pF @ 100 V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3PF
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