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STMicroelectronics STF2HNK60Z

Part No.:
STF2HNK60Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
IC Supply HubSTF2HNK60Z.pdf
Description:
MOSFET N-CH 600V 2A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:709

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Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
20W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

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6. What is the process for return or replacement of STF2HNK60Z?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STF2HNK60Z we delivered, we will accept the replacement or return of the STF2HNK60Z only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STF2HNK60Z.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STF2HNK60Z pin diagram, STF2HNK60Z datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image STF2HNK60Z
Part Number STF2HNK60Z
Manufacturer STMicroelectronics
Series SuperMESH™
Package/Case TO-220-3 Full Pack
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220FP
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