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Renesas Electronics Corporation HAT2279H-EL-E

Part No.:
HAT2279H-EL-E
Manufacturer:
Renesas Electronics Corporation
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
IC Supply HubHAT2279H-EL-E.pdf
Description:
MOSFET N-CH 80V 30A LFPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Renesas Electronics Corporation
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3520 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK

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6. What is the process for return or replacement of HAT2279H-EL-E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HAT2279H-EL-E we delivered, we will accept the replacement or return of the HAT2279H-EL-E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HAT2279H-EL-E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as HAT2279H-EL-E pin diagram, HAT2279H-EL-E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image HAT2279H-EL-E
Part Number HAT2279H-EL-E
Manufacturer Renesas Electronics Corporation
Series -
Package/Case SC-100, SOT-669
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3520 pF @ 10 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK
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