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Qorvo UJ4SC075010L8SSB

Part No.:
UJ4SC075010L8SSB
Manufacturer:
Qorvo
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Datasheet:
IC Supply HubUJ4SC075010L8SSB.pdf
Description:
750V/10MO,SICFET,G4,TOLL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Qorvo
Series:
-
Package/Case:
8-PowerSFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel, Depletion Mode
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
750 V
Current - Continuous Drain (Id) @ 25°C:
106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
12V
Rds On (Max) @ Id, Vgs:
14.2mOhm @ 60A, 12V
Vgs(th) (Max) @ Id:
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 15 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3245 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
556W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TOLL

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6. What is the process for return or replacement of UJ4SC075010L8SSB?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the UJ4SC075010L8SSB we delivered, we will accept the replacement or return of the UJ4SC075010L8SSB only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of UJ4SC075010L8SSB.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as UJ4SC075010L8SSB pin diagram, UJ4SC075010L8SSB datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image UJ4SC075010L8SSB
Part Number UJ4SC075010L8SSB
Manufacturer Qorvo
Series -
Package/Case 8-PowerSFN
Packaging Bulk
Product Status Active
FET Type N-Channel, Depletion Mode
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 14.2mOhm @ 60A, 12V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3245 pF @ 400 V
FET Feature -
Power Dissipation (Max) 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TOLL
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