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onsemi NVXK2KR80WDT

Part No.:
NVXK2KR80WDT
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
32-PowerDIP Module (1.311", 33.30mm)
Datasheet:
IC Supply HubNVXK2KR80WDT.pdf
Description:
ELITESIC POWER MODULE FOR OBC, 8
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Manufacturer:
onsemi
Series:
APM32
Package/Case:
32-PowerDIP Module (1.311", 33.30mm)
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
116mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
1154 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
82W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
APM32

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6. What is the process for return or replacement of NVXK2KR80WDT?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NVXK2KR80WDT we delivered, we will accept the replacement or return of the NVXK2KR80WDT only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVXK2KR80WDT.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image NVXK2KR80WDT
Part Number NVXK2KR80WDT
Manufacturer onsemi
Series APM32
Package/Case 32-PowerDIP Module (1.311", 33.30mm)
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 116mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
FET Feature -
Power Dissipation (Max) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package APM32
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