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onsemi NDDP010N25AZT4H

Part No.:
NDDP010N25AZT4H
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC Supply HubNDDP010N25AZT4H.pdf
Description:
MOSFET N-CH 250V 10A DPAK/TP-FA
Quantity:
Payment:
Payment
Shipping:
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Inventory:0

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Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
980 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta), 52W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK/TP-FA

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6. What is the process for return or replacement of NDDP010N25AZT4H?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NDDP010N25AZT4H we delivered, we will accept the replacement or return of the NDDP010N25AZT4H only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NDDP010N25AZT4H.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image NDDP010N25AZT4H
Part Number NDDP010N25AZT4H
Manufacturer onsemi
Series -
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1W (Ta), 52W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK/TP-FA
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