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onsemi FQA10N80

Part No.:
FQA10N80
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-3P-3, SC-65-3
Datasheet:
IC Supply HubFQA10N80.pdf
Description:
MOSFET N-CH 800V 9.8A TO3P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
onsemi
Series:
QFET®
Package/Case:
TO-3P-3, SC-65-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
71 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
240W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P

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6. What is the process for return or replacement of FQA10N80?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQA10N80 we delivered, we will accept the replacement or return of the FQA10N80 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQA10N80.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FQA10N80 pin diagram, FQA10N80 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FQA10N80 FQA10N80C FQA10N80C-F109 FQA10N80_F109
Part Number FQA10N80 FQA10N80C FQA10N80C-F109 FQA10N80_F109
Manufacturer onsemi onsemi onsemi onsemi
Series QFET® QFET® QFET® QFET®
Package/Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Packaging Tube Tube Tube Tube
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) 10A (Tc) 10A (Tc) 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 4.9A, 10V 1.1Ohm @ 5A, 10V 1.1Ohm @ 5A, 10V 1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 58 nC @ 10 V 58 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2800 pF @ 25 V 2800 pF @ 25 V 2700 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 240W (Tc) 240W (Tc) 240W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - -
Qualification - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
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