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onsemi FDA28N50F

Part No.:
FDA28N50F
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-3P-3, SC-65-3
Datasheet:
IC Supply HubFDA28N50F.pdf
Description:
MOSFET N-CH 500V 28A TO3PN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
onsemi
Series:
UniFET™
Package/Case:
TO-3P-3, SC-65-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
175mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
5387 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
310W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN

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6. What is the process for return or replacement of FDA28N50F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDA28N50F we delivered, we will accept the replacement or return of the FDA28N50F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDA28N50F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FDA28N50F pin diagram, FDA28N50F datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FDA28N50F
Part Number FDA28N50F
Manufacturer onsemi
Series UniFET™
Package/Case TO-3P-3, SC-65-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5387 pF @ 25 V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3PN
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