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onsemi BUZ11_R4941

Part No.:
BUZ11_R4941
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC Supply HubBUZ11_R4941.pdf
Description:
MOSFET N-CH 50V 30A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
75W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

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6. What is the process for return or replacement of BUZ11_R4941?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BUZ11_R4941 we delivered, we will accept the replacement or return of the BUZ11_R4941 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BUZ11_R4941.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as BUZ11_R4941 pin diagram, BUZ11_R4941 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image BUZ11_R4941
Part Number BUZ11_R4941
Manufacturer onsemi
Series -
Package/Case TO-220-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
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