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NovuSem NC1M120C12HTNG

Part No.:
NC1M120C12HTNG
Manufacturer:
NovuSem
Category:
FETs, MOSFETs
Package:
TO-247-4
Datasheet:
IC Supply HubNC1M120C12HTNG.pdf
Description:
SiC MOSFET N 1200V 12mohm 214A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Manufacturer:
NovuSem
Series:
NC1M
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
214A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
20mOhm @ 100A, 20V
Vgs(th) (Max) @ Id:
3.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
8330 pF @ 1000 V
FET Feature:
-
Power Dissipation (Max):
938W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L

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6. What is the process for return or replacement of NC1M120C12HTNG?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NC1M120C12HTNG we delivered, we will accept the replacement or return of the NC1M120C12HTNG only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NC1M120C12HTNG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as NC1M120C12HTNG pin diagram, NC1M120C12HTNG datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image NC1M120C12HTNG
Part Number NC1M120C12HTNG
Manufacturer NovuSem
Series NC1M
Package/Case TO-247-4
Packaging Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 20mOhm @ 100A, 20V
Vgs(th) (Max) @ Id 3.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 8330 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 938W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
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