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NoMIS Power N3T035MP120D

Part No.:
N3T035MP120D
Manufacturer:
NoMIS Power
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
IC Supply HubN3T035MP120D.pdf
Description:
1200 V, 76A SIC MOSFET, TO-247
Quantity:
Payment:
Payment
Shipping:
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Inventory:652

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Manufacturer:
NoMIS Power
Series:
1200
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
76A
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id:
3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs:
126 nC @ 20 V
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
2204 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
319W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3L

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6. What is the process for return or replacement of N3T035MP120D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the N3T035MP120D we delivered, we will accept the replacement or return of the N3T035MP120D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of N3T035MP120D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as N3T035MP120D pin diagram, N3T035MP120D datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image N3T035MP120D
Part Number N3T035MP120D
Manufacturer NoMIS Power
Series 1200
Package/Case TO-247-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 76A
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id 3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2204 pF @ 800 V
FET Feature -
Power Dissipation (Max) 319W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3L
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