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Nexperia USA Inc. PSMN1R5-30YL,115

Part No.:
PSMN1R5-30YL,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
IC Supply HubPSMN1R5-30YL,115.pdf
Description:
MOSFET N-CH 30V 100A LFPAK56
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,500

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Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
77.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5057 pF @ 12 V
FET Feature:
-
Power Dissipation (Max):
109W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

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6. What is the process for return or replacement of PSMN1R5-30YL,115?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(1)Inform us within 90 days

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Image PSMN1R5-30YLC,115 PSMN1R5-40YSDX PSMN1R5-50YLHX PSMN1R5-30YL,115 PSMN1R5-40PS,127
Part Number PSMN1R5-30YLC,115 PSMN1R5-40YSDX PSMN1R5-50YLHX PSMN1R5-30YL,115 PSMN1R5-40PS,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Series - TrenchMOS™ - - -
Package/Case SC-100, SOT-669 SC-100, SOT-669 SOT-1023, 4-LFPAK SC-100, SOT-669 TO-220-3
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Product Status Active Active Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 50 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 240A (Tc) 200A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.55mOhm @ 25A, 10V 1.5mOhm @ 25A, 10V 1.75mOhm @ 25A, 10V 1.5mOhm @ 15A, 10V 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 3.6V @ 1mA 2.2V @ 1mA 2.15V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 99 nC @ 10 V 181 nC @ 10 V 77.9 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4044 pF @ 15 V 7752 pF @ 20 V 11143 pF @ 25 V 5057 pF @ 12 V 9710 pF @ 20 V
FET Feature - Schottky Diode (Body) - - -
Power Dissipation (Max) 179W (Tc) 238W (Tc) 333W (Tc) 109W (Tc) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 TO-220AB
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