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Microchip Technology TN0110N3-G-P002

Part No.:
TN0110N3-G-P002
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
IC Supply HubTN0110N3-G-P002.pdf
Description:
MOSFET N-CH 100V 350MA TO92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,864

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

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6. What is the process for return or replacement of TN0110N3-G-P002?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TN0110N3-G-P002 we delivered, we will accept the replacement or return of the TN0110N3-G-P002 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TN0110N3-G-P002.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TN0110N3-G-P002 pin diagram, TN0110N3-G-P002 datasheet?

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Image TN0110N3-G-P002
Part Number TN0110N3-G-P002
Manufacturer Microchip Technology
Series -
Package/Case TO-226-3, TO-92-3 (TO-226AA)
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92-3
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