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Microchip Technology APTM100DA18TG

Part No.:
APTM100DA18TG
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
SP4
Datasheet:
IC Supply HubAPTM100DA18TG.pdf
Description:
MOSFET N-CH 1000V 43A SP4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SP4
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
210mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:
372 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
10400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
780W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SP4

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6. What is the process for return or replacement of APTM100DA18TG?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the APTM100DA18TG we delivered, we will accept the replacement or return of the APTM100DA18TG only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of APTM100DA18TG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as APTM100DA18TG pin diagram, APTM100DA18TG datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image APTM100DA18TG
Part Number APTM100DA18TG
Manufacturer Microchip Technology
Series -
Package/Case SP4
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 372 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 780W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SP4
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