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IXYS IXFY4N85X

Part No.:
IXFY4N85X
Manufacturer:
IXYS
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC Supply HubIXFY4N85X.pdf
Description:
MOSFET N-CH 850V 3.5A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
IXYS
Series:
HiPerFET™, Ultra X
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
850 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
247 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

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6. What is the process for return or replacement of IXFY4N85X?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IXFY4N85X we delivered, we will accept the replacement or return of the IXFY4N85X only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IXFY4N85X.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IXFY4N85X pin diagram, IXFY4N85X datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IXFY4N85X
Part Number IXFY4N85X
Manufacturer IXYS
Series HiPerFET™, Ultra X
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 247 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
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