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International Rectifier IRFB38N20DPBF

Part No.:
IRFB38N20DPBF
Manufacturer:
International Rectifier
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC Supply HubIRFB38N20DPBF.pdf
Description:
IRFB38N20 - 12V-300V N-CHANNEL P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,390

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Manufacturer:
International Rectifier
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

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6. What is the process for return or replacement of IRFB38N20DPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB38N20DPBF we delivered, we will accept the replacement or return of the IRFB38N20DPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB38N20DPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRFB38N20DPBF pin diagram, IRFB38N20DPBF datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IRFB38N20DPBF
Part Number IRFB38N20DPBF
Manufacturer International Rectifier
Series HEXFET®
Package/Case TO-220-3
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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