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International Rectifier IRF1010ZPBF

Part No.:
IRF1010ZPBF
Manufacturer:
International Rectifier
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC Supply HubIRF1010ZPBF.pdf
Description:
IRF1010 - 12V-300V N-CHANNEL POW
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:350

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Manufacturer:
International Rectifier
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

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6. What is the process for return or replacement of IRF1010ZPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF1010ZPBF we delivered, we will accept the replacement or return of the IRF1010ZPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF1010ZPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF1010ZPBF pin diagram, IRF1010ZPBF datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IRF1010ZPBF
Part Number IRF1010ZPBF
Manufacturer International Rectifier
Series HEXFET®
Package/Case TO-220-3
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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