Infineon Technologies IRFZ48NSTRR

Part No.:
IRFZ48NSTRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC Supply HubIRFZ48NSTRR.pdf
Description:
MOSFET N-CH 55V 64A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
81 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1970 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 130W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

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6. What is the process for return or replacement of IRFZ48NSTRR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFZ48NSTRR we delivered, we will accept the replacement or return of the IRFZ48NSTRR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFZ48NSTRR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRFZ48NSTRR pin diagram, IRFZ48NSTRR datasheet?

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Image IRFZ48NSTRRPBF IRFZ48NSTRR
Part Number IRFZ48NSTRRPBF IRFZ48NSTRR
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 32A, 10V 14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 25 V 1970 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 130W (Tc) 3.8W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
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