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Infineon Technologies IRFHM3911TRPBF

Part No.:
IRFHM3911TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
IC Supply HubIRFHM3911TRPBF.pdf
Description:
MOSFET N-CH 100V 3.2A/20A 8PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:32,666

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
115mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id:
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta), 29W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (3x3)

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6. What is the process for return or replacement of IRFHM3911TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFHM3911TRPBF we delivered, we will accept the replacement or return of the IRFHM3911TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFHM3911TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRFHM3911TRPBF pin diagram, IRFHM3911TRPBF datasheet?

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Image IRFHM3911TRPBF
Part Number IRFHM3911TRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3x3)
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