Infineon Technologies IRF8707GPBF

Part No.:
IRF8707GPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC Supply HubIRF8707GPBF.pdf
Description:
MOSFET N-CH 30V 11A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11.9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

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6. What is the process for return or replacement of IRF8707GPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF8707GPBF we delivered, we will accept the replacement or return of the IRF8707GPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF8707GPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF8707GPBF pin diagram, IRF8707GPBF datasheet?

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Image IRF8707GPBF
Part Number IRF8707GPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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