Infineon Technologies IRF7526D1

Part No.:
IRF7526D1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
IC Supply HubIRF7526D1.pdf
Description:
MOSFET P-CH 30V 2A MICRO8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
FETKY™
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
180 pF @ 25 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
1.25W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Micro8™

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6. What is the process for return or replacement of IRF7526D1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7526D1 we delivered, we will accept the replacement or return of the IRF7526D1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7526D1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF7526D1 pin diagram, IRF7526D1 datasheet?

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Image IRF7526D1PBF IRF7526D1TRPBF IRF7526D1TR IRF7526D1
Part Number IRF7526D1PBF IRF7526D1TRPBF IRF7526D1TR IRF7526D1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series FETKY™ FETKY™ FETKY™ FETKY™
Package/Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging Tube Tape & Reel (TR) Tape & Reel (TR) Tube
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta) 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.2A, 10V 200mOhm @ 1.2A, 10V 200mOhm @ 1.2A, 10V 200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V 11 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V 180 pF @ 25 V 180 pF @ 25 V 180 pF @ 25 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - -
Qualification - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro8™ Micro8™ Micro8™ Micro8™
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