Infineon Technologies IRF6616

Part No.:
IRF6616
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
DirectFET™ Isometric MX
Datasheet:
IC Supply HubIRF6616.pdf
Description:
MOSFET N-CH 30V 19A DIRECTFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
DirectFET™ Isometric MX
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3765 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta), 89W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DIRECTFET™ MX

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6. What is the process for return or replacement of IRF6616?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF6616 we delivered, we will accept the replacement or return of the IRF6616 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF6616.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF6616 pin diagram, IRF6616 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IRF6616 IRF6616TR1 IRF6616TR1PBF IRF6616TRPBF
Part Number IRF6616 IRF6616TR1 IRF6616TR1PBF IRF6616TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET® HEXFET®
Package/Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MX
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 106A (Tc) 19A (Ta), 106A (Tc) 19A (Ta), 106A (Tc) 19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 19A, 10V 5mOhm @ 19A, 10V 5mOhm @ 19A, 10V 5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 44 nC @ 4.5 V 44 nC @ 4.5 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3765 pF @ 20 V 3765 pF @ 20 V 3765 pF @ 20 V 3765 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Grade - - - -
Qualification - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MX
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