Infineon Technologies IRF3711ZCS

Part No.:
IRF3711ZCS
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC Supply HubIRF3711ZCS.pdf
Description:
MOSFET N-CH 20V 92A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2150 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

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6. What is the process for return or replacement of IRF3711ZCS?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF3711ZCS we delivered, we will accept the replacement or return of the IRF3711ZCS only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF3711ZCS.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF3711ZCS pin diagram, IRF3711ZCS datasheet?

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Image IRF3711ZCSTRL IRF3711ZCS IRF3711ZCSTRR
Part Number IRF3711ZCSTRL IRF3711ZCS IRF3711ZCSTRR
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET®
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR) Tube Tape & Reel (TR)
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 92A (Tc) 92A (Tc) 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V 6mOhm @ 15A, 10V 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.45V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 24 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 10 V 2150 pF @ 10 V 2150 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 79W (Tc) 79W (Tc) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
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