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Infineon Technologies IQE013N04LM6SCATMA1

Part No.:
IQE013N04LM6SCATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Datasheet:
IC Supply HubIQE013N04LM6SCATMA1.pdf
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,529

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 6
Package/Case:
8-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3800 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-WHSON-8-1

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6. What is the process for return or replacement of IQE013N04LM6SCATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IQE013N04LM6SCATMA1 we delivered, we will accept the replacement or return of the IQE013N04LM6SCATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IQE013N04LM6SCATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IQE013N04LM6SCATMA1 pin diagram, IQE013N04LM6SCATMA1 datasheet?

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Image IQE013N04LM6SCATMA1
Part Number IQE013N04LM6SCATMA1
Manufacturer Infineon Technologies
Series OptiMOS™ 6
Package/Case 8-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 20 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-WHSON-8-1
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