Infineon Technologies IPI80N06S3L06XK

Part No.:
IPI80N06S3L06XK
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
IC Supply HubIPI80N06S3L06XK.pdf
Description:
MOSFET N-CH 55V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
196 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
9417 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

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6. What is the process for return or replacement of IPI80N06S3L06XK?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPI80N06S3L06XK we delivered, we will accept the replacement or return of the IPI80N06S3L06XK only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPI80N06S3L06XK.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image IPI80N06S3L06XK
Part Number IPI80N06S3L06XK
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 9417 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
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