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Infineon Technologies IMZA65R107M1HXKSA1

Part No.:
IMZA65R107M1HXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
IC Supply HubIMZA65R107M1HXKSA1.pdf
Description:
MOSFET 650V NCH SIC TRENCH
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:240

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Manufacturer:
Infineon Technologies
Series:
CoolSIC™ M1
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V
Rds On (Max) @ Id, Vgs:
142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id:
5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 18 V
Vgs (Max):
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
496 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
75W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

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6. What is the process for return or replacement of IMZA65R107M1HXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IMZA65R107M1HXKSA1 we delivered, we will accept the replacement or return of the IMZA65R107M1HXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IMZA65R107M1HXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IMZA65R107M1HXKSA1 pin diagram, IMZA65R107M1HXKSA1 datasheet?

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Image IMZA65R107M1HXKSA1
Part Number IMZA65R107M1HXKSA1
Manufacturer Infineon Technologies
Series CoolSIC™ M1
Package/Case TO-247-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 18 V
Vgs (Max) +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds 496 pF @ 400 V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
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