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Infineon Technologies BTS282Z E3230

Part No.:
BTS282Z E3230
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-7
Datasheet:
IC Supply HubBTS282Z E3230.pdf
Description:
MOSFET N-CH 49V 80A TO220-7
Quantity:
Payment:
Payment
Shipping:
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Inventory:0

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Manufacturer:
Infineon Technologies
Series:
TEMPFET®
Package/Case:
TO-220-7
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
49 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:
2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:
232 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4800 pF @ 25 V
FET Feature:
Temperature Sensing Diode
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
P-TO220-7-230

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6. What is the process for return or replacement of BTS282Z E3230?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BTS282Z E3230 we delivered, we will accept the replacement or return of the BTS282Z E3230 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BTS282Z E3230.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as BTS282Z E3230 pin diagram, BTS282Z E3230 datasheet?

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Image BTS282Z E3230
Part Number BTS282Z E3230
Manufacturer Infineon Technologies
Series TEMPFET®
Package/Case TO-220-7
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 49 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package P-TO220-7-230
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