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Infineon Technologies AUIRFS8409

Part No.:
AUIRFS8409
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC Supply HubAUIRFS8409.pdf
Description:
MOSFET N-CH 40V 195A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
450 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
14240 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

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6. What is the process for return or replacement of AUIRFS8409?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the AUIRFS8409 we delivered, we will accept the replacement or return of the AUIRFS8409 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of AUIRFS8409.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

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Image AUIRFS8409-7TRL AUIRFS8409-7P AUIRFS8409TRL AUIRFS8409
Part Number AUIRFS8409-7TRL AUIRFS8409-7P AUIRFS8409TRL AUIRFS8409
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET® HEXFET®
Package/Case TO-263-7, D2PAK (6 Leads + Tab) TO-263-7, D2PAK (6 Leads + Tab) TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR) Tube Tape & Reel (TR) Tube
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc) 240A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 100A, 10V 0.75mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA 3.9V @ 250µA 3.9V @ 250µA 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V 460 nC @ 10 V 450 nC @ 10 V 450 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13975 pF @ 25 V 13975 pF @ 25 V 14240 pF @ 25 V 14240 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - -
Qualification - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (7-Lead) D2PAK (7-Lead) PG-TO263-3 PG-TO263-3
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