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Honeywell Aerospace HTNFET-T

Part No.:
HTNFET-T
Manufacturer:
Honeywell Aerospace
Category:
FETs, MOSFETs
Package:
4-SIP
Datasheet:
IC Supply HubHTNFET-T.pdf
Description:
MOSFET N-CH 55V 4POWER TAB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Honeywell Aerospace
Series:
HTMOS™
Package/Case:
4-SIP
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
4.3 nC @ 5 V
Vgs (Max):
10V
Input Capacitance (Ciss) (Max) @ Vds:
290 pF @ 28 V
FET Feature:
-
Power Dissipation (Max):
50W (Tj)
Operating Temperature:
-55°C ~ 225°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-Power Tab

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The price and inventory of HTNFET-T fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of HTNFET-T?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HTNFET-T we delivered, we will accept the replacement or return of the HTNFET-T only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HTNFET-T.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as HTNFET-T pin diagram, HTNFET-T datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image HTNFET-T HTNFET-D HTNFET-DC HTNFET-TC
Part Number HTNFET-T HTNFET-D HTNFET-DC HTNFET-TC
Manufacturer Honeywell Aerospace Honeywell Aerospace Honeywell Aerospace Honeywell Aerospace
Series HTMOS™ HTMOS™ HTMOS™ HTMOS™
Package/Case 4-SIP 8-CDIP Exposed Pad 8-CDIP Exposed Pad -
Packaging Bulk Bulk Bulk Bulk
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C - - - -
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 5V
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V 400mOhm @ 100mA, 5V 400mOhm @ 100mA, 5V 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100µA 2.4V @ 100µA 2.4V @ 100µA 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V 4.3 nC @ 5 V 4.3 nC @ 5 V 4.3 nC @ 5 V
Vgs (Max) 10V 10V 10V 10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V 290 pF @ 28 V 290 pF @ 28 V 290 pF @ 28 V
FET Feature - - - -
Power Dissipation (Max) 50W (Tj) 50W (Tj) 50W (Tj) 50W (Tj)
Operating Temperature -55°C ~ 225°C (TJ) -55°C ~ 225°C (TJ) - -
Grade - - - -
Qualification - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package 4-Power Tab 8-CDIP-EP - -
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