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GeneSiC Semiconductor GA50JT06-258

Part No.:
GA50JT06-258
Manufacturer:
GeneSiC Semiconductor
Category:
FETs, MOSFETs
Package:
TO-258-3, TO-258AA
Datasheet:
IC Supply HubGA50JT06-258.pdf
Description:
TRANS SJT 600V 100A TO258
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
GeneSiC Semiconductor
Series:
-
Package/Case:
TO-258-3, TO-258AA
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
25mOhm @ 50A
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
769W (Tc)
Operating Temperature:
-55°C ~ 225°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-258

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6. What is the process for return or replacement of GA50JT06-258?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GA50JT06-258 we delivered, we will accept the replacement or return of the GA50JT06-258 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GA50JT06-258.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as GA50JT06-258 pin diagram, GA50JT06-258 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image GA50JT06-258
Part Number GA50JT06-258
Manufacturer GeneSiC Semiconductor
Series -
Package/Case TO-258-3, TO-258AA
Packaging Bulk
Product Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 25mOhm @ 50A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 769W (Tc)
Operating Temperature -55°C ~ 225°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-258
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