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APSEMI AC2M1000170D

Part No.:
AC2M1000170D
Manufacturer:
APSEMI
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
IC Supply HubAC2M1000170D.pdf
Description:
SIC MOSFET N-CH 1700V 6A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,000

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Manufacturer:
APSEMI
Series:
*
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1700 V
Current - Continuous Drain (Id) @ 25°C:
6A
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:
4V @ 0.5mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
69W
Operating Temperature:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

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6. What is the process for return or replacement of AC2M1000170D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the AC2M1000170D we delivered, we will accept the replacement or return of the AC2M1000170D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of AC2M1000170D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as AC2M1000170D pin diagram, AC2M1000170D datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image AC2M1000170D
Part Number AC2M1000170D
Manufacturer APSEMI
Series *
Package/Case TO-247-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 6A
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 0.5mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 69W
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
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