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Rohm Semiconductor QS8M51TR

Part No.:
QS8M51TR
Manufacturer:
Rohm Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-SMD, Flat Leads
Datasheet:
IC Supply HubQS8M51TR.pdf
Description:
MOSFET N/P-CH 100V 2A/1.5A TSMT8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:33,181

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
8-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2A, 1.5A
Rds On (Max) @ Id, Vgs:
325mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 25V, 950pF @ 25V
Power - Max:
1.5W
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8

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6. What is the process for return or replacement of QS8M51TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the QS8M51TR we delivered, we will accept the replacement or return of the QS8M51TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of QS8M51TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as QS8M51TR pin diagram, QS8M51TR datasheet?

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Image QS8M51TR
Part Number QS8M51TR
Manufacturer Rohm Semiconductor
Series -
Package/Case 8-SMD, Flat Leads
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 325mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V, 950pF @ 25V
Power - Max 1.5W
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT8
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