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Rohm Semiconductor QS6K1FRATR

Part No.:
QS6K1FRATR
Manufacturer:
Rohm Semiconductor
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
IC Supply HubQS6K1FRATR.pdf
Description:
MOSFET 2N-CH 30V 1A TSMT6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,144

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Rds On (Max) @ Id, Vgs:
238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
77pF @ 10V
Power - Max:
900mW (Tc)
Operating Temperature:
150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)

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6. What is the process for return or replacement of QS6K1FRATR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the QS6K1FRATR we delivered, we will accept the replacement or return of the QS6K1FRATR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of QS6K1FRATR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as QS6K1FRATR pin diagram, QS6K1FRATR datasheet?

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Image QS6K1FRATR
Part Number QS6K1FRATR
Manufacturer Rohm Semiconductor
Series -
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Rds On (Max) @ Id, Vgs 238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 77pF @ 10V
Power - Max 900mW (Tc)
Operating Temperature 150°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
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