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Rohm Semiconductor QH8JB5TCR

Part No.:
QH8JB5TCR
Manufacturer:
Rohm Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-SMD, Flat Leads
Datasheet:
IC Supply HubQH8JB5TCR.pdf
Description:
MOSFET 2P-CH 40V 5A TSMT8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:730

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
8-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Rds On (Max) @ Id, Vgs:
41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 20V
Power - Max:
1.1W (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8

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6. What is the process for return or replacement of QH8JB5TCR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the QH8JB5TCR we delivered, we will accept the replacement or return of the QH8JB5TCR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of QH8JB5TCR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as QH8JB5TCR pin diagram, QH8JB5TCR datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image QH8JB5TCR
Part Number QH8JB5TCR
Manufacturer Rohm Semiconductor
Series -
Package/Case 8-SMD, Flat Leads
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Rds On (Max) @ Id, Vgs 41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 20V
Power - Max 1.1W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT8
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