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Qorvo UFB15C12E1BC3N

Part No.:
UFB15C12E1BC3N
Manufacturer:
Qorvo
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
IC Supply HubUFB15C12E1BC3N.pdf
Description:
MOSFET 4P-CH 1200V 24A MODULE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Qorvo
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
SiCFET (Silicon Carbide)
Configuration:
4 P-Channel (Full Bridge)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
24A (Tj)
Rds On (Max) @ Id, Vgs:
90mOhm @ 15A, 12V
Vgs(th) (Max) @ Id:
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
46nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
1445pF @ 800V
Power - Max:
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module

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6. What is the process for return or replacement of UFB15C12E1BC3N?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the UFB15C12E1BC3N we delivered, we will accept the replacement or return of the UFB15C12E1BC3N only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of UFB15C12E1BC3N.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as UFB15C12E1BC3N pin diagram, UFB15C12E1BC3N datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image UFB15C12E1BC3N
Part Number UFB15C12E1BC3N
Manufacturer Qorvo
Series -
Package/Case Module
Packaging Bulk
Product Status Active
Technology SiCFET (Silicon Carbide)
Configuration 4 P-Channel (Full Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 24A (Tj)
Rds On (Max) @ Id, Vgs 90mOhm @ 15A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 1445pF @ 800V
Power - Max 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package Module
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