onsemi NVXR17S90M2SPB

Part No.:
NVXR17S90M2SPB
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
IC Supply HubNVXR17S90M2SPB.pdf
Description:
MOSFET 6N-CH 900V 620A SSDC39
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7

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Manufacturer:
onsemi
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
Silicon Carbide (SiC)
Configuration:
6 N-Channel (3-Phase Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
900V
Current - Continuous Drain (Id) @ 25°C:
620A (Tj)
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 620A, 18V
Vgs(th) (Max) @ Id:
4.3V @ 200mA
Gate Charge (Qg) (Max) @ Vgs:
2400nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds:
45000pF @ 400V
Power - Max:
1kW (Tj)
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Chassis Mount
Supplier Device Package:
SSDC39

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6. What is the process for return or replacement of NVXR17S90M2SPB?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NVXR17S90M2SPB we delivered, we will accept the replacement or return of the NVXR17S90M2SPB only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVXR17S90M2SPB.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as NVXR17S90M2SPB pin diagram, NVXR17S90M2SPB datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image NVXR17S90M2SPB
Part Number NVXR17S90M2SPB
Manufacturer onsemi
Series -
Package/Case Module
Packaging Bulk
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (3-Phase Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 620A (Tj)
Rds On (Max) @ Id, Vgs 2.1mOhm @ 620A, 18V
Vgs(th) (Max) @ Id 4.3V @ 200mA
Gate Charge (Qg) (Max) @ Vgs 2400nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 45000pF @ 400V
Power - Max 1kW (Tj)
Operating Temperature -40°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Chassis Mount
Supplier Device Package SSDC39
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