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onsemi HGT1S10N120BNST

Part No.:
HGT1S10N120BNST
Manufacturer:
onsemi
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC Supply HubHGT1S10N120BNST.pdf
Description:
IGBT NPT 1200V 35A TO263
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
onsemi
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
35 A
Current - Collector Pulsed (Icm):
80 A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Power - Max:
298 W
Switching Energy:
320µJ (on), 800µJ (off)
Input Type:
Standard
Gate Charge:
100 nC
Td (on/off) @ 25°C:
23ns/165ns
Test Condition:
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

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We have a professional and experienced quality control team to strictly verify and test the HGT1S10N120BNST. All suppliers must pass our qualification reviews before they can publish their products including HGT1S10N120BNST on IC Supply Hub; we pay more attention to the channels and quality of HGT1S10N120BNST products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the HGT1S10N120BNST price and inventory displayed accurate?

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6. What is the process for return or replacement of HGT1S10N120BNST?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGT1S10N120BNST we delivered, we will accept the replacement or return of the HGT1S10N120BNST only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HGT1S10N120BNST.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as HGT1S10N120BNST pin diagram, HGT1S10N120BNST datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image HGT1S10N120BNST
Part Number HGT1S10N120BNST
Manufacturer onsemi
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
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