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onsemi FDC6305N

Part No.:
FDC6305N
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
IC Supply HubFDC6305N.pdf
Description:
MOSFET 2N-CH 20V 2.7A SSOT6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,843

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.7A
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 10V
Power - Max:
700mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SuperSOT™-6

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6. What is the process for return or replacement of FDC6305N?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDC6305N we delivered, we will accept the replacement or return of the FDC6305N only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDC6305N.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FDC6305N pin diagram, FDC6305N datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FDC6305N
Part Number FDC6305N
Manufacturer onsemi
Series PowerTrench®
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
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