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Microsemi Corporation APTM60A23FT1G

Part No.:
APTM60A23FT1G
Manufacturer:
Microsemi Corporation
Category:
FET, MOSFET Arrays
Package:
SP1
Datasheet:
IC Supply HubAPTM60A23FT1G.pdf
Description:
MOSFET 2N-CH 600V 20A SP1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Microsemi Corporation
Series:
-
Package/Case:
SP1
Packaging:
Bulk
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
20A
Rds On (Max) @ Id, Vgs:
276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
5316pF @ 25V
Power - Max:
208W
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SP1

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6. What is the process for return or replacement of APTM60A23FT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the APTM60A23FT1G we delivered, we will accept the replacement or return of the APTM60A23FT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of APTM60A23FT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as APTM60A23FT1G pin diagram, APTM60A23FT1G datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image APTM60A23FT1G
Part Number APTM60A23FT1G
Manufacturer Microsemi Corporation
Series -
Package/Case SP1
Packaging Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5316pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SP1
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