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Microchip Technology APTMC120AM55CT1AG

Part No.:
APTMC120AM55CT1AG
Manufacturer:
Microchip Technology
Category:
FET, MOSFET Arrays
Package:
SP1
Datasheet:
IC Supply HubAPTMC120AM55CT1AG.pdf
Description:
MOSFET 2N-CH 1200V 55A SP1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SP1
Packaging:
Bulk
Product Status:
Last Time Buy
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Rds On (Max) @ Id, Vgs:
49mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:
2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 1000V
Power - Max:
250W
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SP1

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6. What is the process for return or replacement of APTMC120AM55CT1AG?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the APTMC120AM55CT1AG we delivered, we will accept the replacement or return of the APTMC120AM55CT1AG only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of APTMC120AM55CT1AG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as APTMC120AM55CT1AG pin diagram, APTMC120AM55CT1AG datasheet?

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Image APTMC120AM55CT1AG
Part Number APTMC120AM55CT1AG
Manufacturer Microchip Technology
Series -
Package/Case SP1
Packaging Bulk
Product Status Last Time Buy
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 49mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Power - Max 250W
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SP1
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