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IXYS FMM150-0075X2F

Part No.:
FMM150-0075X2F
Manufacturer:
IXYS
Category:
FET, MOSFET Arrays
Package:
ISOPLUSi5-PAK™
Description:
MOSFET 2N-CH 75V 120A I4-PAC
Quantity:
Payment:
Payment
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Shipping

Inventory:0

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Manufacturer:
IXYS
Series:
HiPerFET™, TrenchT2™
Package/Case:
ISOPLUSi5-PAK™
Packaging:
Tube
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Asymmetrical
FET Feature:
-
Drain to Source Voltage (Vdss):
75V
Current - Continuous Drain (Id) @ 25°C:
120A
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
10500pF @ 25V
Power - Max:
170W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ISOPLUS i4-PAC™

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6. What is the process for return or replacement of FMM150-0075X2F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FMM150-0075X2F we delivered, we will accept the replacement or return of the FMM150-0075X2F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FMM150-0075X2F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FMM150-0075X2F pin diagram, FMM150-0075X2F datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FMM150-0075X2F FMM150-0075P
Part Number FMM150-0075X2F FMM150-0075P
Manufacturer IXYS IXYS
Series HiPerFET™, TrenchT2™ -
Package/Case ISOPLUSi5-PAK™ i4-Pac™-5
Packaging Tube Tube
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 75V 75V
Current - Continuous Drain (Id) @ 25°C 120A 150A
Rds On (Max) @ Id, Vgs 5.8mOhm @ 100A, 10V 4.2mOhm @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V -
Power - Max 170W -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS i4-PAC™ ISOPLUS i4-PAC™
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