Infineon Technologies IRF5851

Part No.:
IRF5851
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
IC Supply HubIRF5851.pdf
Description:
MOSFET N/P-CH 20V 2.7A 6TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.7A, 2.2A
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 15V
Power - Max:
960mW
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

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6. What is the process for return or replacement of IRF5851?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF5851 we delivered, we will accept the replacement or return of the IRF5851 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF5851.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IRF5851 pin diagram, IRF5851 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IRF5851 IRF5851TR IRF5851TRPBF
Part Number IRF5851 IRF5851TR IRF5851TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET®
Package/Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Packaging Tube Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 2.7A, 2.2A 2.7A, 2.2A 2.7A, 2.2A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V 90mOhm @ 2.7A, 4.5V 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V 6nC @ 4.5V 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V 400pF @ 15V 400pF @ 15V
Power - Max 960mW 960mW 960mW
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP
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