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Infineon Technologies IQE008N03LM5CGSCATMA1

Part No.:
IQE008N03LM5CGSCATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
9-PowerWDFN
Datasheet:
IC Supply HubIQE008N03LM5CGSCATMA1.pdf
Description:
MOSFET 2N-CH 30V 9WHTFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
9-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-WHTFN-9

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3. Are the IQE008N03LM5CGSCATMA1 price and inventory displayed accurate?

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6. What is the process for return or replacement of IQE008N03LM5CGSCATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IQE008N03LM5CGSCATMA1 we delivered, we will accept the replacement or return of the IQE008N03LM5CGSCATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IQE008N03LM5CGSCATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IQE008N03LM5CGSCATMA1 pin diagram, IQE008N03LM5CGSCATMA1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image IQE008N03LM5CGSCATMA1
Part Number IQE008N03LM5CGSCATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case 9-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-WHTFN-9
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