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GE Aerospace GE12047CCA3

Part No.:
GE12047CCA3
Manufacturer:
GE Aerospace
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
IC Supply HubGE12047CCA3.pdf
Description:
MOSFET 2N-CH 1200V 475A MODULE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

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Manufacturer:
GE Aerospace
Series:
SiC Power
Package/Case:
Module
Packaging:
Box
Product Status:
Active
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
475A
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id:
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs:
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds:
29300pF @ 600V
Power - Max:
1250W
Operating Temperature:
-55°C ~ 150°C (Tc)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module

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2. How does IC Supply Hub guarantee that GE12047CCA3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the GE12047CCA3. All suppliers must pass our qualification reviews before they can publish their products including GE12047CCA3 on IC Supply Hub; we pay more attention to the channels and quality of GE12047CCA3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the GE12047CCA3 price and inventory displayed accurate?

The price and inventory of GE12047CCA3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of GE12047CCA3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GE12047CCA3 we delivered, we will accept the replacement or return of the GE12047CCA3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GE12047CCA3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as GE12047CCA3 pin diagram, GE12047CCA3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image GE12047CCA3
Part Number GE12047CCA3
Manufacturer GE Aerospace
Series SiC Power
Package/Case Module
Packaging Box
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 475A
Rds On (Max) @ Id, Vgs 4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs 1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 29300pF @ 600V
Power - Max 1250W
Operating Temperature -55°C ~ 150°C (Tc)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package Module
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